si4848dy vishay siliconix document number: 71356 s-03950?rev. b, 26-may-03 www.vishay.com 1 n-channel 150-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 150 0.085 @ v gs = 10 v 3.7 150 0.095 @ v gs = 6.0 v 3.5 so-8 sd sd sd gd 5 6 7 8 top view 2 3 4 1 d g s n-channel mosfet ordering information: si4848dy si4848dy-t1 (with tape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 150 v gate-source v oltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 3.7 2.7 continuous drain current (t j = 150 c) a t a = 70 c i d 3.0 2.1 pulsed drain current i dm 25 a avalanch current l = 0.1 mh i as 10 continuous source current (diode conduction) a i s 2.5 1.3 maximum power dissipation a t a = 25 c p d 3.0 1.5 w maximum power dissipation a t a = 70 c p d 1.9 1.0 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 35 42 maximum junction-to-ambient a steady state r thja 68 82 c/w maximum junction-to-foot (drain) steady state r thjf 18 23 c/w notes a. surface mounted on 1? x 1? fr4 board.
si4848dy vishay siliconix www.vishay.com 2 document number: 71356 s-03950?rev. b, 26-may-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 120 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 120 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 25 a drain source on state resistance a r ds( ) v gs = 10 v, i d = 3.5 a 0.068 0.085 drain-source on-state resistance a r ds(on) v gs = 6.0 v, i d = 3.0 a 0.076 0.095 forward t ransconductance a g fs v ds = 15 v, i d = 5 a 15 s diode forward voltage a v sd i s = 2.5 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 17 21 gate-source charge q gs v ds = 75 v, v gs = 10 v, i d = 3.5 a 3.2 nc gate-drain charge q gd 6.0 gate resistance r g 0.5 0.85 1.8 turn-on delay time t d(on) 9.0 14 rise time t r v dd = 75 v, r l = 21 10 15 turn-off delay time t d(off) v dd = 75 v , r l = 21 i d 3.5 a, v gen = 10 v, r g = 6 24 35 ns fall time t f 17 25 source-drain reverse recovery time t rr i f = 2.5 a, di/dt = 100 a/ s 45 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 5 10 15 20 25 0123456 0 5 10 15 20 25 0246810 v gs = 10 thru 6 v t c = 125 c -55 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 5 v 3, 4 v
si4848dy vishay siliconix document number: 71356 s-03950?rev. b, 26-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 300 600 900 1200 0 30 60 90 120 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 0 6 12 18 24 30 0.00 0.03 0.06 0.09 0.12 0.15 0 5 10 15 20 25 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 75 v i d = 3.5 a i d - drain current (a) v gs = 10 v i d = 3.5 a gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction temperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 0.25 0246810 t j = 150 c t j = 25 c i d = 3.5 a 50 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 6 v v gs = 10 v
si4848dy vishay siliconix www.vishay.com 4 document number: 71356 s-03950?rev. b, 26-may-03 typical characteristics (25 c unless noted) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 -1.5 -1.0 -0.5 0.0 0.5 1.0 -50 -25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold voltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effectiv e transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0 30 60 10 20 power (w) single pulse power time (sec) 1 100 10 40 0.1 0.01 50 10 -3 10 -2 1 1000 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 10 100
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